Description
DIODE GEN PURP 600V 8A TO220-2
Features
• Ultrafast 30 Nanosecond Recovery Time
• 150°C Operating Junction Temperature
• High Voltage Capability of 600 V
• Low Forward Drop
• Low Leakage Specified @ 125°C Case Temperature
• This Device is Pb−Free and RoHS Compliant
Detailed Description
| Mfr | onsemi |
| Series | - |
| Package | Tube |
| Product Status | Obsolete |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 3.2 V @ 8 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Current - Reverse Leakage @ Vr | 30 µA @ 600 V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Base Product Number | NHPV08 |
Download
https://www.onsemi.com/pdf/datasheet/nhpv08s600-d.pdfDescription
DIODE GEN PURP 600V 8A TO220-2
Features
• Ultrafast 30 Nanosecond Recovery Time
• 150°C Operating Junction Temperature
• High Voltage Capability of 600 V
• Low Forward Drop
• Low Leakage Specified @ 125°C Case Temperature
• This Device is Pb−Free and RoHS Compliant
Detailed Description
| Mfr | onsemi |
| Series | - |
| Package | Tube |
| Product Status | Obsolete |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 3.2 V @ 8 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Current - Reverse Leakage @ Vr | 30 µA @ 600 V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Base Product Number | NHPV08 |
Download
https://www.onsemi.com/pdf/datasheet/nhpv08s600-d.pdf