Description
DIODE GEN PURP 100V 8A TO220-2
Features
• Ultrafast 25 and 50 Nanosecond Recovery Time
• 175°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Low Forward Voltage
• Low Leakage Current
• Reverse Voltage to 600 V
• ESD Ratings:
Machine Model = C (> 400 V)
Human Body Model = 3B (> 16,000 V)
• SUR8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant*
Detailed Description
| Mfr | onsemi |
| Series | SWITCHMODE™ |
| Package | Tube |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 975 mV @ 8 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Base Product Number | MUR810 |
Download
https://www.onsemi.com/pdf/datasheet/mur820-d.pdf
Description
DIODE GEN PURP 100V 8A TO220-2
Features
• Ultrafast 25 and 50 Nanosecond Recovery Time
• 175°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Low Forward Voltage
• Low Leakage Current
• Reverse Voltage to 600 V
• ESD Ratings:
Machine Model = C (> 400 V)
Human Body Model = 3B (> 16,000 V)
• SUR8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant*
Detailed Description
| Mfr | onsemi |
| Series | SWITCHMODE™ |
| Package | Tube |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 975 mV @ 8 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Base Product Number | MUR810 |
Download
https://www.onsemi.com/pdf/datasheet/mur820-d.pdf
