Description
DIODE GEN PURP 600V 20A TO263AB
FEATURES
• Glass passivated pellet chip junction
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified
• Meets JESD 201 class 1A whisker test
• Flexible solution for reliable AC power
rectification
• High surge, low VF rugged blocking diode for DC charging
stations
Detailed Description
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified (Io) | 20A |
| Voltage - Forward (Vf) (Max) @ If | 1.67 V @ 60 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 160 ns |
| Current - Reverse Leakage @ Vr | 100 µA @ 600 V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263AB (D²PAK) |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Base Product Number | 20ETF06 |
Download
https://www.vishay.com/docs/96119/vs-20etf06slhm3.pdf
Description
DIODE GEN PURP 600V 20A TO263AB
FEATURES
• Glass passivated pellet chip junction
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified
• Meets JESD 201 class 1A whisker test
• Flexible solution for reliable AC power
rectification
• High surge, low VF rugged blocking diode for DC charging
stations
Detailed Description
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified (Io) | 20A |
| Voltage - Forward (Vf) (Max) @ If | 1.67 V @ 60 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 160 ns |
| Current - Reverse Leakage @ Vr | 100 µA @ 600 V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263AB (D²PAK) |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Base Product Number | 20ETF06 |
Download
https://www.vishay.com/docs/96119/vs-20etf06slhm3.pdf
