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Silicon Carbide (SiC) Schottky Diode FFSP2065BDN-F085
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Silicon Carbide (SiC) Schottky Diode FFSP2065BDN-F085

  • FFSP2065BDN-F085

  • onsemi

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Description


DIODE SIL CARB 650V 10A TO220-3


Features

• Max Junction Temperature 175°C

• Avalanche Rated 49 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

• No Reverse Recovery/No Forward Recovery

• AEC−Q101 Qualified

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant



Detailed Description

Mfr Part #FFSP2065BDN-F085
Mfronsemi
SeriesAutomotive, AEC-Q101
PackageTube
Product StatusActive
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io)10A
Voltage - Forward (Vf) (Max) @ If1.7 V @ 10 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr40 µA @ 650 V
Capacitance @ Vr, F421pF @ 1V, 100kHz
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
Operating Temperature - Junction-55°C ~ 175°C
Base Product NumberFFSP2065


Download

https://www.onsemi.com/pdf/datasheet/ffsp2065bdn-f085-d.pdf


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