Description
DIODE SIL CARB 650V 15A TO220-2L
Features
• Max Junction Temperature 175°C
• Avalanche Rated 72 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery/No Forward Recovery
• This Device is Pb−Free, Halogen Free/BFR Free and RoHS
Compliant
Detailed Description
| Mfr Part # | FFSP1265A |
| Mfr | onsemi |
| Series | - |
| Package | Tube |
| Product Status | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 15A |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 12 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
| Capacitance @ Vr, F | 665pF @ 1V, 100kHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220-2L |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Base Product Number | FFSP1265 |
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Description
DIODE SIL CARB 650V 15A TO220-2L
Features
• Max Junction Temperature 175°C
• Avalanche Rated 72 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery/No Forward Recovery
• This Device is Pb−Free, Halogen Free/BFR Free and RoHS
Compliant
Detailed Description
| Mfr Part # | FFSP1265A |
| Mfr | onsemi |
| Series | - |
| Package | Tube |
| Product Status | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 15A |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 12 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
| Capacitance @ Vr, F | 665pF @ 1V, 100kHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220-2L |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Base Product Number | FFSP1265 |
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