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Silicon Carbide Schottky Diodes IDDD12G65C6XTMA1
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Silicon Carbide Schottky Diodes IDDD12G65C6XTMA1

  • IDDD12G65C6XTMA1
  • Infineon Technologies
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Description


DIODE SIL CARB 650V 34A HDSOP-10


Features

› No reverse-recovery charge

› Purely capacitive switching

› High operating temperature

(Tj, max =175°C)

Benefits

› System efficiency improvement

compared to Si-based diodes

› Reduced cooling requirements

› Enabling higher frequency/increased

power density

› Higher system reliability due to lower

operating temperature

› Reduced EMI


Detailed Description

MfrInfineon Technologies
SeriesCoolSiC™+
PackageTape & Reel (TR)
Cut Tape (CT)

Product StatusActive
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io)34A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr40 µA @ 420 V
Capacitance @ Vr, F594pF @ 1V, 1MHz
Mounting TypeSurface Mount
Package / Case10-PowerSOP Module
Supplier Device PackagePG-HDSOP-10-1
Operating Temperature - Junction-55°C ~ 175°C
Base Product NumberIDDD12


Download

https://www.infineon.com/dgdl/Infineon-Selection_guide_CoolSiC_Silicon_Carbide_Schottky_diodes-SG-v05_00-EN.pdf?fileId=db3a3043399628450139b0701a1d21d2


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