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Description
DIODE SIL CARB 650V 8A TO220-2
Features
• Max Junction Temperature 175°C
• Avalanche Rated 26 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery / No Forward Recovery
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Detailed Description
Mfr | onsemi |
Series | - |
Package | Tube |
Product Status | Active |
Technology | SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 8A |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 6 A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 40 µA @ 650 V |
Capacitance @ Vr, F | 259pF @ 1V, 100kHz |
Mounting Type | Through Hole |
Package / Case | TO-220-2 |
Supplier Device Package | TO-220-2 |
Operating Temperature - Junction | -55°C ~ 175°C |
Base Product Number | FFSP0665 |
Download
https://www.onsemi.com/download/data-sheet/pdf/ffsp0665b-d.pdf
Description
DIODE SIL CARB 650V 8A TO220-2
Features
• Max Junction Temperature 175°C
• Avalanche Rated 26 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery / No Forward Recovery
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Detailed Description
Mfr | onsemi |
Series | - |
Package | Tube |
Product Status | Active |
Technology | SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 8A |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 6 A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 40 µA @ 650 V |
Capacitance @ Vr, F | 259pF @ 1V, 100kHz |
Mounting Type | Through Hole |
Package / Case | TO-220-2 |
Supplier Device Package | TO-220-2 |
Operating Temperature - Junction | -55°C ~ 175°C |
Base Product Number | FFSP0665 |
Download
https://www.onsemi.com/download/data-sheet/pdf/ffsp0665b-d.pdf