STPSC12065G-TR
STMicroelectronics
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Description
DIODE SIL CARBIDE 650V 12A D2PAK
The STPSC12065G-TR features a low forward voltage drop and fast switching speed, making it ideal for high-frequency applications and high-power handling.
Its advanced silicon carbide technology ensures enhanced efficiency and reliability in power conversion.
With its compact size and surface-mount package, the STPSC12065G-TR is well-suited for space-constrained designs.
Whether you're working on power supplies, inverters, or electric vehicle applications, this diode provides a reliable and efficient solution.
The STPSC12065G-TR is built with high-quality materials and undergoes stringent testing to ensure its durability and reliability.
It operates within a wide temperature range, making it suitable for various operating conditions and environments.
Features
• No or negligible reverse recovery
• Switching behavior independent of temperature
• Dedicated to PFC applications
• High forward surge capability
• Operating Tj
from -40 °C to 175 °C
• D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
• ECOPACK2 compliant
• Power efficient product
Detailed Description
Mfr | STMicroelectronics |
Series | ECOPACK®2 |
Package | Tape & Reel (TR) |
Cut Tape (CT) | |
Product Status | Active |
Technology | SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 12A |
Voltage - Forward (Vf) (Max) @ If | 1.45 V @ 12 A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 150 µA @ 650 V |
Capacitance @ Vr, F | 750pF @ 0V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | D²PAK |
Operating Temperature - Junction | -40°C ~ 175°C |
Base Product Number | STPSC12065 |
Download
https://www.st.com/resource/en/datasheet/stpsc12065.pdf
Description
DIODE SIL CARBIDE 650V 12A D2PAK
The STPSC12065G-TR features a low forward voltage drop and fast switching speed, making it ideal for high-frequency applications and high-power handling.
Its advanced silicon carbide technology ensures enhanced efficiency and reliability in power conversion.
With its compact size and surface-mount package, the STPSC12065G-TR is well-suited for space-constrained designs.
Whether you're working on power supplies, inverters, or electric vehicle applications, this diode provides a reliable and efficient solution.
The STPSC12065G-TR is built with high-quality materials and undergoes stringent testing to ensure its durability and reliability.
It operates within a wide temperature range, making it suitable for various operating conditions and environments.
Features
• No or negligible reverse recovery
• Switching behavior independent of temperature
• Dedicated to PFC applications
• High forward surge capability
• Operating Tj
from -40 °C to 175 °C
• D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
• ECOPACK2 compliant
• Power efficient product
Detailed Description
Mfr | STMicroelectronics |
Series | ECOPACK®2 |
Package | Tape & Reel (TR) |
Cut Tape (CT) | |
Product Status | Active |
Technology | SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 12A |
Voltage - Forward (Vf) (Max) @ If | 1.45 V @ 12 A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 150 µA @ 650 V |
Capacitance @ Vr, F | 750pF @ 0V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | D²PAK |
Operating Temperature - Junction | -40°C ~ 175°C |
Base Product Number | STPSC12065 |
Download
https://www.st.com/resource/en/datasheet/stpsc12065.pdf