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Schottky Silicon Carbide Diode STPSC12065G-TR
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Schottky Silicon Carbide Diode STPSC12065G-TR

  • STPSC12065G-TR

  • STMicroelectronics

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Description


DIODE SIL CARBIDE 650V 12A D2PAK

The STPSC12065G-TR features a low forward voltage drop and fast switching speed, making it ideal for high-frequency applications and high-power handling. 

Its advanced silicon carbide technology ensures enhanced efficiency and reliability in power conversion.


With its compact size and surface-mount package, the STPSC12065G-TR is well-suited for space-constrained designs. 

Whether you're working on power supplies, inverters, or electric vehicle applications, this diode provides a reliable and efficient solution.


The STPSC12065G-TR is built with high-quality materials and undergoes stringent testing to ensure its durability and reliability. 

It operates within a wide temperature range, making it suitable for various operating conditions and environments.




Features

• No or negligible reverse recovery

• Switching behavior independent of temperature

• Dedicated to PFC applications

• High forward surge capability

• Operating Tj

 from -40 °C to 175 °C

• D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.

• ECOPACK2 compliant

• Power efficient product


Detailed Description


MfrSTMicroelectronics
SeriesECOPACK®2
PackageTape & Reel (TR)
Cut Tape (CT)

Product StatusActive
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io)12A
Voltage - Forward (Vf) (Max) @ If1.45 V @ 12 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr150 µA @ 650 V
Capacitance @ Vr, F750pF @ 0V, 1MHz
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD²PAK
Operating Temperature - Junction-40°C ~ 175°C
Base Product NumberSTPSC12065


Download

https://www.st.com/resource/en/datasheet/stpsc12065.pdf

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