Description
DIODE SIL CARB 650V 20A TO220FM
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
4) High surge current capability
Type: Silicon Carbide Schottky Diode
Maximum Voltage Rating: 650V
Maximum Current Rating: 20A (or 20 Amperes)
Package: TO-220FM (TO-220 Full Metal)
Features and Applications:
Silicon Carbide (SiC) Schottky diodes offer several advantages over traditional silicon diodes, including:
High Voltage Rating: The SCS320AMC diode can handle high voltage levels up to 650V, making it suitable for use in high-power applications.
High Current Rating: With a maximum current rating of 20A, it can handle relatively high current levels, making it suitable for power electronics and high-power applications.
Low Forward Voltage Drop: SiC Schottky diodes typically exhibit lower forward voltage drop compared to standard silicon diodes. This results in reduced power losses and improved efficiency.
Fast Switching Speed: SiC Schottky diodes have faster switching characteristics, enabling them to respond quickly in high-frequency applications.
The TO-220FM package is a common through-hole package with a full metal backing that enhances heat dissipation, making it suitable for applications where efficient cooling is required.
Applications for the SCS320AMC diode include:
Power factor correction (PFC) circuits in power supplies.
High-power rectification and freewheeling diode in switching power converters and inverters.
High-power motor drives and industrial applications.
High-frequency circuits where fast switching is essential.
Detailed Description
| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Tube |
| Product Status | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 20A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 20 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 100 µA @ 650 V |
| Capacitance @ Vr, F | 1000pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 Full Pack |
| Supplier Device Package | TO-220FM |
| Operating Temperature - Junction | 175°C (Max) |
| Base Product Number | SCS320 |
Download
https://fscdn.rohm.com/en/products/databook/datasheet/discrete/sic/sbd/scs320am-e.pdf
Description
DIODE SIL CARB 650V 20A TO220FM
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
4) High surge current capability
Type: Silicon Carbide Schottky Diode
Maximum Voltage Rating: 650V
Maximum Current Rating: 20A (or 20 Amperes)
Package: TO-220FM (TO-220 Full Metal)
Features and Applications:
Silicon Carbide (SiC) Schottky diodes offer several advantages over traditional silicon diodes, including:
High Voltage Rating: The SCS320AMC diode can handle high voltage levels up to 650V, making it suitable for use in high-power applications.
High Current Rating: With a maximum current rating of 20A, it can handle relatively high current levels, making it suitable for power electronics and high-power applications.
Low Forward Voltage Drop: SiC Schottky diodes typically exhibit lower forward voltage drop compared to standard silicon diodes. This results in reduced power losses and improved efficiency.
Fast Switching Speed: SiC Schottky diodes have faster switching characteristics, enabling them to respond quickly in high-frequency applications.
The TO-220FM package is a common through-hole package with a full metal backing that enhances heat dissipation, making it suitable for applications where efficient cooling is required.
Applications for the SCS320AMC diode include:
Power factor correction (PFC) circuits in power supplies.
High-power rectification and freewheeling diode in switching power converters and inverters.
High-power motor drives and industrial applications.
High-frequency circuits where fast switching is essential.
Detailed Description
| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Tube |
| Product Status | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 20A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 20 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 100 µA @ 650 V |
| Capacitance @ Vr, F | 1000pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 Full Pack |
| Supplier Device Package | TO-220FM |
| Operating Temperature - Junction | 175°C (Max) |
| Base Product Number | SCS320 |
Download
https://fscdn.rohm.com/en/products/databook/datasheet/discrete/sic/sbd/scs320am-e.pdf
