Description
DIODE SIL CARB 650V 15A TO220FM
Features
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
4) High surge current capability
Detailed Description
| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Tube |
| Product Status | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 15A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 15 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 75 µA @ 650 V |
| Capacitance @ Vr, F | 750pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 Full Pack |
| Supplier Device Package | TO-220FM |
| Operating Temperature - Junction | 175°C (Max) |
| Base Product Number | SCS315 |
Download
https://fscdn.rohm.com/en/products/databook/datasheet/discrete/sic/sbd/scs315am-e.pdf
Description
DIODE SIL CARB 650V 15A TO220FM
Features
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
4) High surge current capability
Detailed Description
| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Tube |
| Product Status | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 15A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 15 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 75 µA @ 650 V |
| Capacitance @ Vr, F | 750pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 Full Pack |
| Supplier Device Package | TO-220FM |
| Operating Temperature - Junction | 175°C (Max) |
| Base Product Number | SCS315 |
Download
https://fscdn.rohm.com/en/products/databook/datasheet/discrete/sic/sbd/scs315am-e.pdf
