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Schottky Barrier Diodes SCS312AJTLL
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Schottky Barrier Diodes SCS312AJTLL

  • SCS312AJTLL

  • Rohm Semiconductor

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Description


DIODE SIL CARBIDE 650V 12A LPTL


Features

1) Low forward voltage

2) Negligible recovery time/current

3) Temperature independent switching behavior

4) High surge current capability

5) Low leakage current


Detailed Description

MfrRohm Semiconductor
Series-
PackageTape & Reel (TR)
Cut Tape (CT)

Product StatusActive
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io)12A
Voltage - Forward (Vf) (Max) @ If1.5 V @ 12 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr60 µA @ 650 V
Capacitance @ Vr, F600pF @ 1V, 1MHz
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageLPTL
Operating Temperature - Junction175°C (Max)
Base Product NumberSCS312


Download

https://fscdn.rohm.com/en/products/databook/datasheet/discrete/sic/sbd/scs312aj-e.pdf

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