Description
DIODE SIL CARBIDE 650V 6A LPTL
Features
1) Low forward voltage
2) Negligible recovery time/current
3) Temperature independent switching behavior
4) High surge current capability
Detailed Description
| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Product Status | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 6A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 6 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 30 µA @ 650 V |
| Capacitance @ Vr, F | 300pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | LPTL |
| Operating Temperature - Junction | 175°C (Max) |
| Base Product Number | SCS306 |
Download
https://fscdn.rohm.com/en/products/databook/datasheet/discrete/sic/sbd/scs306aj-e.pdf
Description
DIODE SIL CARBIDE 650V 6A LPTL
Features
1) Low forward voltage
2) Negligible recovery time/current
3) Temperature independent switching behavior
4) High surge current capability
Detailed Description
| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Product Status | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 6A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 6 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 30 µA @ 650 V |
| Capacitance @ Vr, F | 300pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | LPTL |
| Operating Temperature - Junction | 175°C (Max) |
| Base Product Number | SCS306 |
Download
https://fscdn.rohm.com/en/products/databook/datasheet/discrete/sic/sbd/scs306aj-e.pdf
