Description
DIODE GEN PURP 1KV 1A AXIAL
Introducing the MUR1100EG, a high-quality diode designed for general purpose applications. With a voltage rating of 1KV and a current rating of 1A, this diode is perfect for a wide range of electronic projects.
The MUR1100EG is built to deliver exceptional performance and reliability. Its axial design ensures easy installation and compatibility with various circuit configurations.
Whether you're working on power supplies, rectifiers, or other electronic devices, the MUR1100EG is an ideal choice. Its robust construction and superior functionality make it suitable for both professional and personal use.
Choose the MUR1100EG for your next project and experience the precision and efficiency it offers. Trust in its quality and let it enhance the performance of your electronic applications.
Features
• 10 mjoules Avalanche Energy Guaranteed
• Excellent Protection Against Voltage Transients in Switching
Inductive Load Circuits
• Ultrafast 75 Nanosecond Recovery Time
• 175°C Operating Junction Temperature
• Low Forward Voltage
• Low Leakage Current
• High Temperature Glass Passivated Junction
• Reverse Voltage to 1000 V
• These are Pb−Free Devices*
Detailed Description
| Mfr Part # | MUR1100EG |
| Mfr | onsemi |
| Series | SWITCHMODE™ |
| Package | Bulk |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 1 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 100 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 1000 V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | DO-204AL, DO-41, Axial |
| Supplier Device Package | Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Base Product Number | MUR1100 |
Download
https://www.onsemi.com/pdf/datasheet/mur180e-d.pdf
Description
DIODE GEN PURP 1KV 1A AXIAL
Introducing the MUR1100EG, a high-quality diode designed for general purpose applications. With a voltage rating of 1KV and a current rating of 1A, this diode is perfect for a wide range of electronic projects.
The MUR1100EG is built to deliver exceptional performance and reliability. Its axial design ensures easy installation and compatibility with various circuit configurations.
Whether you're working on power supplies, rectifiers, or other electronic devices, the MUR1100EG is an ideal choice. Its robust construction and superior functionality make it suitable for both professional and personal use.
Choose the MUR1100EG for your next project and experience the precision and efficiency it offers. Trust in its quality and let it enhance the performance of your electronic applications.
Features
• 10 mjoules Avalanche Energy Guaranteed
• Excellent Protection Against Voltage Transients in Switching
Inductive Load Circuits
• Ultrafast 75 Nanosecond Recovery Time
• 175°C Operating Junction Temperature
• Low Forward Voltage
• Low Leakage Current
• High Temperature Glass Passivated Junction
• Reverse Voltage to 1000 V
• These are Pb−Free Devices*
Detailed Description
| Mfr Part # | MUR1100EG |
| Mfr | onsemi |
| Series | SWITCHMODE™ |
| Package | Bulk |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 1 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 100 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 1000 V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | DO-204AL, DO-41, Axial |
| Supplier Device Package | Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Base Product Number | MUR1100 |
Download
https://www.onsemi.com/pdf/datasheet/mur180e-d.pdf
