Description
DIODE GEN PURP 200V 8A TO220-2
Features
• Ultrafast 35 Nanosecond Recovery Time
• 175°C Operating Junction Temperature
• Popular TO−220 Package
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Low Forward Voltage
• Low Leakage Current
• High Temperature Glass Passivated Junction
• Pb−Free Package is Available*
Detailed Description
| Mfr | onsemi |
| Series | SWITCHMODE™ |
| Package | Tube |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 22 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Base Product Number | BYW80 |
Download
https://www.onsemi.com/pdf/datasheet/byw80-d.pdf
Description
DIODE GEN PURP 200V 8A TO220-2
Features
• Ultrafast 35 Nanosecond Recovery Time
• 175°C Operating Junction Temperature
• Popular TO−220 Package
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Low Forward Voltage
• Low Leakage Current
• High Temperature Glass Passivated Junction
• Pb−Free Package is Available*
Detailed Description
| Mfr | onsemi |
| Series | SWITCHMODE™ |
| Package | Tube |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 22 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Base Product Number | BYW80 |
Download
https://www.onsemi.com/pdf/datasheet/byw80-d.pdf
