Description
DIODE GEN PURP 100V 2A AXIAL
Features
• Ultrafast 20 Nanosecond Recovery Times
• 175°C Operating Junction Temperature
• Low Forward Voltage
• Low Leakage Current
• High Temperature Glass Passivated Junction
• These are Pb−Free Devices*
Detailed Description
| Mfr | onsemi |
| Series | SWITCHMODE™ |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Current - Average Rectified (Io) | 2A |
| Voltage - Forward (Vf) (Max) @ If | 940 mV @ 2 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Current - Reverse Leakage @ Vr | 2 µA @ 100 V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | DO-204AL, DO-41, Axial |
| Supplier Device Package | Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Base Product Number | MUR210 |
Download
https://www.onsemi.com/pdf/datasheet/mur210-d.pdf
Description
DIODE GEN PURP 100V 2A AXIAL
Features
• Ultrafast 20 Nanosecond Recovery Times
• 175°C Operating Junction Temperature
• Low Forward Voltage
• Low Leakage Current
• High Temperature Glass Passivated Junction
• These are Pb−Free Devices*
Detailed Description
| Mfr | onsemi |
| Series | SWITCHMODE™ |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Current - Average Rectified (Io) | 2A |
| Voltage - Forward (Vf) (Max) @ If | 940 mV @ 2 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Current - Reverse Leakage @ Vr | 2 µA @ 100 V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | DO-204AL, DO-41, Axial |
| Supplier Device Package | Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Base Product Number | MUR210 |
Download
https://www.onsemi.com/pdf/datasheet/mur210-d.pdf
