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SILICON CARBIDE DIODES STPSC8H065DLF
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SILICON CARBIDE DIODES STPSC8H065DLF

  • STPSC8H065DLF
  • STMicroelectronics
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Description


DIODE SIL CARB 650V 8A POWERFLAT


Features

• Less than 1 mm height package

• High creepage package

• No or negligible reverse recovery

• Temperature independent switching behavior

• High forward surge capability

• Low drop forward voltage

• Power efficient product

• ECOPACK2 compliant component


Detailed Description

MfrSTMicroelectronics
SeriesECOPACK®2
PackageTape & Reel (TR)
Cut Tape (CT)

Product StatusActive
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io)8A
Voltage - Forward (Vf) (Max) @ If1.55 V @ 8 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr80 µA @ 650 V
Capacitance @ Vr, F460pF @ 0V, 1MHz
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device PackagePowerFlat™ (8x8) HV
Operating Temperature - Junction-40°C ~ 175°C
Base Product NumberSTPSC8


Download

https://www.st.com/resource/en/datasheet/stpsc8h065dlf.pdf

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