Description
DIODE GEN PURP 400V 2A DO15
Features
Glass−Passivated Cavity−Free Junction
High Surge Current Capability
Low Leakage CurrentSuper
Fast Recovery Time for High Efficiency
Low Forward Voltage, High Current Capability
Detailed Description
| Mfr | onsemi |
| Series | - |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 400 V |
| Current - Average Rectified (Io) | 2A |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 2 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 400 V |
| Capacitance @ Vr, F | 45pF @ 4V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | DO-204AC, DO-15, Axial |
| Supplier Device Package | DO-15 |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Base Product Number | EGP20 |
Download
https://www.onsemi.com/pdf/datasheet/egp20k-d.pdf
Description
DIODE GEN PURP 400V 2A DO15
Features
Glass−Passivated Cavity−Free Junction
High Surge Current Capability
Low Leakage CurrentSuper
Fast Recovery Time for High Efficiency
Low Forward Voltage, High Current Capability
Detailed Description
| Mfr | onsemi |
| Series | - |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 400 V |
| Current - Average Rectified (Io) | 2A |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 2 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 400 V |
| Capacitance @ Vr, F | 45pF @ 4V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | DO-204AC, DO-15, Axial |
| Supplier Device Package | DO-15 |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Base Product Number | EGP20 |
Download
https://www.onsemi.com/pdf/datasheet/egp20k-d.pdf
