Description
DIODE GEN PURP 1KV 8A TO220-2
Features
• 20 mJ Avalanche Energy Guaranteed
• Excellent Protection Against Voltage Transients in Switching
Inductive Load Circuits
• Ultrafast 75 Nanosecond Recovery Time
• 175°C Operating Junction Temperature
• Popular TO−220 Package
• Epoxy Meets UL 94 V−0 @ 0.125 in.
• Low Forward Voltage
• Low Leakage Current
• High Temperature Glass Passivated Junction
• Reverse Voltage to 1000 V
• Pb−Free Packages are Available*
Detailed Description
| Mfr Part # | MUR8100EG |
| Mfr | onsemi |
| Series | SWITCHMODE™ |
| Package | Tube |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 8 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 100 ns |
| Current - Reverse Leakage @ Vr | 25 µA @ 1000 V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Base Product Number | MUR8100 |
Download
https://www.onsemi.com/pdf/datasheet/mur8100e-d.pdf
Description
DIODE GEN PURP 1KV 8A TO220-2
Features
• 20 mJ Avalanche Energy Guaranteed
• Excellent Protection Against Voltage Transients in Switching
Inductive Load Circuits
• Ultrafast 75 Nanosecond Recovery Time
• 175°C Operating Junction Temperature
• Popular TO−220 Package
• Epoxy Meets UL 94 V−0 @ 0.125 in.
• Low Forward Voltage
• Low Leakage Current
• High Temperature Glass Passivated Junction
• Reverse Voltage to 1000 V
• Pb−Free Packages are Available*
Detailed Description
| Mfr Part # | MUR8100EG |
| Mfr | onsemi |
| Series | SWITCHMODE™ |
| Package | Tube |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 8 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 100 ns |
| Current - Reverse Leakage @ Vr | 25 µA @ 1000 V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Base Product Number | MUR8100 |
Download
https://www.onsemi.com/pdf/datasheet/mur8100e-d.pdf
