Description
DIODE GEN PURP 40V 100MA SC59
These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed
switching applications. These devices are housed in the SC–59 package which is
designed for low power surface mount applications.
Detailed Description
| Mfr Part # | M1MA151KT2 |
| Mfr | onsemi |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 40 V |
| Current - Average Rectified (Io) | 100mA |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 100 mA |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 3 ns |
| Current - Reverse Leakage @ Vr | 100 nA @ 35 V |
| Capacitance @ Vr, F | 2pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SC-59 |
| Operating Temperature - Junction | 150°C (Max) |
Download
https://rocelec.widen.net/view/pdf/9dsgofd4o6/MOTOS05463-1.pdf?t.download=true&u=5oefqw
Description
DIODE GEN PURP 40V 100MA SC59
These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed
switching applications. These devices are housed in the SC–59 package which is
designed for low power surface mount applications.
Detailed Description
| Mfr Part # | M1MA151KT2 |
| Mfr | onsemi |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 40 V |
| Current - Average Rectified (Io) | 100mA |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 100 mA |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 3 ns |
| Current - Reverse Leakage @ Vr | 100 nA @ 35 V |
| Capacitance @ Vr, F | 2pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SC-59 |
| Operating Temperature - Junction | 150°C (Max) |
Download
https://rocelec.widen.net/view/pdf/9dsgofd4o6/MOTOS05463-1.pdf?t.download=true&u=5oefqw
