Description
DIODE GEN PURP 50V 1A DO214AC
Features
• Low forward voltage drop.
• High current capability.
• Easy pick and place.
• High surge current capability.
Detailed Description
Mfr | onsemi |
Series | - |
Package | Tape & Reel (TR) |
Cut Tape (CT) | |
Product Status | Active |
Technology | Standard |
Voltage - DC Reverse (Vr) (Max) | 50 V |
Current - Average Rectified (Io) | 1A |
Voltage - Forward (Vf) (Max) @ If | 1 V @ 1 A |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 2 µs |
Current - Reverse Leakage @ Vr | 5 µA @ 50 V |
Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | DO-214AC, SMA |
Supplier Device Package | DO-214AC (SMA) |
Operating Temperature - Junction | -65°C ~ 175°C |
Base Product Number | GF1 |
Download
https://rocelec.widen.net/view/pdf/uxqpnlhldz/ONSM-S-A0003589161-1.pdf?t.download=true&u=5oefqw
Description
DIODE GEN PURP 50V 1A DO214AC
Features
• Low forward voltage drop.
• High current capability.
• Easy pick and place.
• High surge current capability.
Detailed Description
Mfr | onsemi |
Series | - |
Package | Tape & Reel (TR) |
Cut Tape (CT) | |
Product Status | Active |
Technology | Standard |
Voltage - DC Reverse (Vr) (Max) | 50 V |
Current - Average Rectified (Io) | 1A |
Voltage - Forward (Vf) (Max) @ If | 1 V @ 1 A |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 2 µs |
Current - Reverse Leakage @ Vr | 5 µA @ 50 V |
Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | DO-214AC, SMA |
Supplier Device Package | DO-214AC (SMA) |
Operating Temperature - Junction | -65°C ~ 175°C |
Base Product Number | GF1 |
Download
https://rocelec.widen.net/view/pdf/uxqpnlhldz/ONSM-S-A0003589161-1.pdf?t.download=true&u=5oefqw