Description
DIODE GEN PURP 600V 50A TO247-2
Features
• Stealth Recovery, trr = 113 ns (@ IF = 50 A)
• Max Forward Voltage, VF = 1.54 V (@ TC = 25°C)
• 600 V Reverse Voltage and High Reliability
• Operating Temperature = 175°C
• Avalanche Energy Rated
• This Device is Pb−Free and is RoHS Compliant
Detailed Description
Mfr Part # | FFH50US60S |
Mfr | onsemi |
Series | Stealth™ |
Package | Tube |
Product Status | Obsolete |
Technology | Standard |
Voltage - DC Reverse (Vr) (Max) | 600 V |
Current - Average Rectified (Io) | 50A |
Voltage - Forward (Vf) (Max) @ If | 1.54 V @ 50 A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 124 ns |
Current - Reverse Leakage @ Vr | 100 µA @ 600 V |
Capacitance @ Vr, F | - |
Mounting Type | Through Hole |
Package / Case | TO-247-2 |
Supplier Device Package | TO-247-2 |
Operating Temperature - Junction | -55°C ~ 175°C |
Base Product Number | FFH50US60 |
Download
https://www.onsemi.com/pdf/datasheet/ffh50us60s-d.pdf
Description
DIODE GEN PURP 600V 50A TO247-2
Features
• Stealth Recovery, trr = 113 ns (@ IF = 50 A)
• Max Forward Voltage, VF = 1.54 V (@ TC = 25°C)
• 600 V Reverse Voltage and High Reliability
• Operating Temperature = 175°C
• Avalanche Energy Rated
• This Device is Pb−Free and is RoHS Compliant
Detailed Description
Mfr Part # | FFH50US60S |
Mfr | onsemi |
Series | Stealth™ |
Package | Tube |
Product Status | Obsolete |
Technology | Standard |
Voltage - DC Reverse (Vr) (Max) | 600 V |
Current - Average Rectified (Io) | 50A |
Voltage - Forward (Vf) (Max) @ If | 1.54 V @ 50 A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 124 ns |
Current - Reverse Leakage @ Vr | 100 µA @ 600 V |
Capacitance @ Vr, F | - |
Mounting Type | Through Hole |
Package / Case | TO-247-2 |
Supplier Device Package | TO-247-2 |
Operating Temperature - Junction | -55°C ~ 175°C |
Base Product Number | FFH50US60 |
Download
https://www.onsemi.com/pdf/datasheet/ffh50us60s-d.pdf