Description
DIODE GEN PURP 800V 1A DO41
Features
• Superfast recovery time for high efficiency
• Low forward voltage, high current capability
• Low leakage current
• High surge current capability
Detailed Description
| Mfr | onsemi |
| Series | - |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 1 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 800 V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | DO-204AL, DO-41, Axial |
| Supplier Device Package | DO-41 |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Base Product Number | EGP10 |
Download
https://rocelec.widen.net/view/pdf/qrzetq7slg/ONSM-S-A0003590773-1.pdf?t.download=true&u=5oefqw
Description
DIODE GEN PURP 800V 1A DO41
Features
• Superfast recovery time for high efficiency
• Low forward voltage, high current capability
• Low leakage current
• High surge current capability
Detailed Description
| Mfr | onsemi |
| Series | - |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 1 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 800 V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | DO-204AL, DO-41, Axial |
| Supplier Device Package | DO-41 |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Base Product Number | EGP10 |
Download
https://rocelec.widen.net/view/pdf/qrzetq7slg/ONSM-S-A0003590773-1.pdf?t.download=true&u=5oefqw
