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Description
DIODE GEN PURP 400V 3A DO201AD
Features
• Glass Passivated Cavity−free Junction
• High Surge Current Capability
• Low Leakage Current
• Superfast Recovery Time for High Efficiency
• Low Forward Voltage, High Current Capability
• These Devices are Pb−Free, Halide Free and are RoHS Compliant
Detailed Description
Mfr | onsemi |
Series | - |
Package | Tape & Reel (TR) |
Cut Tape (CT) | |
Product Status | Active |
Technology | Standard |
Voltage - DC Reverse (Vr) (Max) | 400 V |
Current - Average Rectified (Io) | 3A |
Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 3 A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 50 ns |
Current - Reverse Leakage @ Vr | 5 µA @ 400 V |
Capacitance @ Vr, F | 75pF @ 4V, 1MHz |
Mounting Type | Through Hole |
Package / Case | DO-201AD, Axial |
Supplier Device Package | DO-201AD |
Operating Temperature - Junction | -65°C ~ 150°C |
Base Product Number | EGP30 |
Download
https://www.onsemi.com/pdf/datasheet/egp30k-d.pdf
Description
DIODE GEN PURP 400V 3A DO201AD
Features
• Glass Passivated Cavity−free Junction
• High Surge Current Capability
• Low Leakage Current
• Superfast Recovery Time for High Efficiency
• Low Forward Voltage, High Current Capability
• These Devices are Pb−Free, Halide Free and are RoHS Compliant
Detailed Description
Mfr | onsemi |
Series | - |
Package | Tape & Reel (TR) |
Cut Tape (CT) | |
Product Status | Active |
Technology | Standard |
Voltage - DC Reverse (Vr) (Max) | 400 V |
Current - Average Rectified (Io) | 3A |
Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 3 A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 50 ns |
Current - Reverse Leakage @ Vr | 5 µA @ 400 V |
Capacitance @ Vr, F | 75pF @ 4V, 1MHz |
Mounting Type | Through Hole |
Package / Case | DO-201AD, Axial |
Supplier Device Package | DO-201AD |
Operating Temperature - Junction | -65°C ~ 150°C |
Base Product Number | EGP30 |
Download
https://www.onsemi.com/pdf/datasheet/egp30k-d.pdf