Description
DIODE GEN PURP 1.2KV 30A TO247-2
Features
• Hyperfast Recovery trr = 85 ns (@ IF = 30 A)
• Max Forward Voltage, VF = 3.2 V (@ TC = 25°C)
• 1200 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• This Device is Pb−Free and is RoHS Compliant
Detailed Description
Mfr | onsemi |
Series | - |
Package | Tube |
Product Status | Last Time Buy |
Technology | Standard |
Voltage - DC Reverse (Vr) (Max) | 1200 V |
Current - Average Rectified (Io) | 30A |
Voltage - Forward (Vf) (Max) @ If | 3.2 V @ 30 A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 85 ns |
Current - Reverse Leakage @ Vr | 250 µA @ 1200 V |
Capacitance @ Vr, F | - |
Mounting Type | Through Hole |
Package / Case | TO-247-2 |
Supplier Device Package | TO-247-2 |
Operating Temperature - Junction | -65°C ~ 175°C |
Base Product Number | RHRG30 |
Download
https://www.onsemi.com/pdf/datasheet/rhrg30120-d.pdf
Description
DIODE GEN PURP 1.2KV 30A TO247-2
Features
• Hyperfast Recovery trr = 85 ns (@ IF = 30 A)
• Max Forward Voltage, VF = 3.2 V (@ TC = 25°C)
• 1200 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• This Device is Pb−Free and is RoHS Compliant
Detailed Description
Mfr | onsemi |
Series | - |
Package | Tube |
Product Status | Last Time Buy |
Technology | Standard |
Voltage - DC Reverse (Vr) (Max) | 1200 V |
Current - Average Rectified (Io) | 30A |
Voltage - Forward (Vf) (Max) @ If | 3.2 V @ 30 A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 85 ns |
Current - Reverse Leakage @ Vr | 250 µA @ 1200 V |
Capacitance @ Vr, F | - |
Mounting Type | Through Hole |
Package / Case | TO-247-2 |
Supplier Device Package | TO-247-2 |
Operating Temperature - Junction | -65°C ~ 175°C |
Base Product Number | RHRG30 |
Download
https://www.onsemi.com/pdf/datasheet/rhrg30120-d.pdf