Description
DIODE GEN PURP 1.2KV 8A DPAK
FEATURES
• Glass passivated pellet chip junction
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified
• Meets JESD 201 class 2 whisker test
• Flexible solution for reliable AC power rectification
• High surge, low VF rugged blocking diode for DC charging
stations
Detailed Description
Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 8 A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 50 µA @ 1200 V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | D-PAK (TO-252AA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Base Product Number | 8EWS12 |
Download
https://www.vishay.com/docs/96118/vs-8ews12shm3.pdf
Description
DIODE GEN PURP 1.2KV 8A DPAK
FEATURES
• Glass passivated pellet chip junction
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified
• Meets JESD 201 class 2 whisker test
• Flexible solution for reliable AC power rectification
• High surge, low VF rugged blocking diode for DC charging
stations
Detailed Description
Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 8 A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 50 µA @ 1200 V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | D-PAK (TO-252AA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Base Product Number | 8EWS12 |
Download
https://www.vishay.com/docs/96118/vs-8ews12shm3.pdf
