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High Voltage Surface VS-8EWS12SLHM3
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High Voltage Surface VS-8EWS12SLHM3

  • VS-8EWS12SLHM3

  • Vishay

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Description


DIODE GEN PURP 1.2KV 8A DPAK


FEATURES

• Glass passivated pellet chip junction

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified

• Meets JESD 201 class 2 whisker test

• Flexible solution for reliable AC power rectification

• High surge, low VF rugged blocking diode for DC charging

stations


Detailed Description


Product Status


Active
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)1200 V
Current - Average Rectified (Io)8A
Voltage - Forward (Vf) (Max) @ If1.1 V @ 8 A
SpeedStandard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr50 µA @ 1200 V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageD-PAK (TO-252AA)
Operating Temperature - Junction-55°C ~ 150°C
Base Product Number8EWS12


Download

https://www.vishay.com/docs/96118/vs-8ews12shm3.pdf


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