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Description
DIODE GEN PURP 1.2KV 65A TO247AD
High voltage rectifiers optimized for very low forward voltage drop with moderate leakage.
These devices are intended for use in main rectification (single or three phase bridge).
FEATURES
• Very low forward voltage drop
• Glass passivated pellet chip junction
• AEC-Q101 qualified meets JESD 201 class 1A
whisker test
• Flexible solution for reliable AC power
rectification
• High surge, low VF rugged blocking diode for DC charging
stations
Detailed Description
| Mfr | Vishay General Semiconductor - Diodes Division |
| Series | Automotive, AEC-Q101 |
| Package | Tube |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 65A |
| Voltage - Forward (Vf) (Max) @ If | 1.12 V @ 65 A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-2 |
| Supplier Device Package | TO-247AD |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Base Product Number | 65EPS12 |
Download
https://www.vishay.com/docs/96107/vs-65eps12lhm3.pdf
Description
DIODE GEN PURP 1.2KV 65A TO247AD
High voltage rectifiers optimized for very low forward voltage drop with moderate leakage.
These devices are intended for use in main rectification (single or three phase bridge).
FEATURES
• Very low forward voltage drop
• Glass passivated pellet chip junction
• AEC-Q101 qualified meets JESD 201 class 1A
whisker test
• Flexible solution for reliable AC power
rectification
• High surge, low VF rugged blocking diode for DC charging
stations
Detailed Description
| Mfr | Vishay General Semiconductor - Diodes Division |
| Series | Automotive, AEC-Q101 |
| Package | Tube |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 65A |
| Voltage - Forward (Vf) (Max) @ If | 1.12 V @ 65 A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-2 |
| Supplier Device Package | TO-247AD |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Base Product Number | 65EPS12 |
Download
https://www.vishay.com/docs/96107/vs-65eps12lhm3.pdf
