Description
DIODE GEN PURP 800V 2A DO214AA
Features
• High−Current Capability, 2 A Rated
• Fast Response: 2 s Trr
• Low−Forward Voltage Drop, 1.15 V VF Max at 2 A
• High−Surge Current Capability, 50 A2s IFSM
• Glass Passivated Junction
• UL Certified, UL #E258596
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Detailed Description
| Mfr | onsemi |
| Series | - |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Current - Average Rectified (Io) | 2A |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 2 A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Current - Reverse Leakage @ Vr | 1 µA @ 800 V |
| Capacitance @ Vr, F | 30pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AA, SMB |
| Supplier Device Package | DO-214AA (SMB) |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Base Product Number | S2K |
Download
https://www.onsemi.com/pdf/datasheet/s2m-d.pdf
Description
DIODE GEN PURP 800V 2A DO214AA
Features
• High−Current Capability, 2 A Rated
• Fast Response: 2 s Trr
• Low−Forward Voltage Drop, 1.15 V VF Max at 2 A
• High−Surge Current Capability, 50 A2s IFSM
• Glass Passivated Junction
• UL Certified, UL #E258596
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Detailed Description
| Mfr | onsemi |
| Series | - |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Current - Average Rectified (Io) | 2A |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 2 A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Current - Reverse Leakage @ Vr | 1 µA @ 800 V |
| Capacitance @ Vr, F | 30pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AA, SMB |
| Supplier Device Package | DO-214AA (SMB) |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Base Product Number | S2K |
Download
https://www.onsemi.com/pdf/datasheet/s2m-d.pdf
