Description
DIODE GEN PURP 800V 1A DO41
Features
• 1.0 ampere operation at TA = 55°C
with no thermal runaway.
• High temperature metallurgically
bonded construction.
• Glass passivated cavity-free junction.
• Typical I R less than 1μA.
• Fast switching for high efficiency.
Detailed Description
Mfr | onsemi |
Series | - |
Package | Tape & Reel (TR) |
Cut Tape (CT) | |
Product Status | Active |
Technology | Standard |
Voltage - DC Reverse (Vr) (Max) | 800 V |
Current - Average Rectified (Io) | 1A |
Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 1 A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 500 ns |
Current - Reverse Leakage @ Vr | 5 µA @ 800 V |
Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
Mounting Type | Through Hole |
Package / Case | DO-204AL, DO-41, Axial |
Supplier Device Package | DO-41 |
Operating Temperature - Junction | -65°C ~ 175°C |
Base Product Number | RGP10 |
Download
https://rocelec.widen.net/view/pdf/qetgvvma5k/ONSM-S-A0003589244-1.pdf?t.download=true&u=5oefqw
Description
DIODE GEN PURP 800V 1A DO41
Features
• 1.0 ampere operation at TA = 55°C
with no thermal runaway.
• High temperature metallurgically
bonded construction.
• Glass passivated cavity-free junction.
• Typical I R less than 1μA.
• Fast switching for high efficiency.
Detailed Description
Mfr | onsemi |
Series | - |
Package | Tape & Reel (TR) |
Cut Tape (CT) | |
Product Status | Active |
Technology | Standard |
Voltage - DC Reverse (Vr) (Max) | 800 V |
Current - Average Rectified (Io) | 1A |
Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 1 A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 500 ns |
Current - Reverse Leakage @ Vr | 5 µA @ 800 V |
Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
Mounting Type | Through Hole |
Package / Case | DO-204AL, DO-41, Axial |
Supplier Device Package | DO-41 |
Operating Temperature - Junction | -65°C ~ 175°C |
Base Product Number | RGP10 |
Download
https://rocelec.widen.net/view/pdf/qetgvvma5k/ONSM-S-A0003589244-1.pdf?t.download=true&u=5oefqw