Description
DIODE GEN PURP 50V 2A DO214AA
Features
• For Surface Mount Applications
• Glass−Passivated Junction
• Low−Profile Package
• Easy Pick and Place
• Built−in Strain Relief
• Superfast Recovery Times for High Efficiency
• These are Pb−Free Devices
Detailed Description
| Mfr | onsemi |
| Series | - |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Current - Average Rectified (Io) | 2A |
| Voltage - Forward (Vf) (Max) @ If | 900 mV @ 2 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 20 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 50 V |
| Capacitance @ Vr, F | 18pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AA, SMB |
| Supplier Device Package | DO-214AA (SMB) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Base Product Number | ES2 |
Download
https://www.onsemi.com/pdf/datasheet/es2d-d.pdf
Description
DIODE GEN PURP 50V 2A DO214AA
Features
• For Surface Mount Applications
• Glass−Passivated Junction
• Low−Profile Package
• Easy Pick and Place
• Built−in Strain Relief
• Superfast Recovery Times for High Efficiency
• These are Pb−Free Devices
Detailed Description
| Mfr | onsemi |
| Series | - |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Current - Average Rectified (Io) | 2A |
| Voltage - Forward (Vf) (Max) @ If | 900 mV @ 2 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 20 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 50 V |
| Capacitance @ Vr, F | 18pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AA, SMB |
| Supplier Device Package | DO-214AA (SMB) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Base Product Number | ES2 |
Download
https://www.onsemi.com/pdf/datasheet/es2d-d.pdf
