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Diodes FFSH2065B-F085
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Diodes FFSH2065B-F085

  • FFSH2065B-F085

  • onsemi

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Description

DIODE SIL CARB 650V 20A TO247-2


Features 

• Max Junction Temperature 175°C 

• Avalanche Rated 94 mJ 

• High Surge Current Capacity 

• Positive Temperature Coefficient 

• Ease of Paralleling 

• No Reverse Recovery/No Forward Recovery 

• AEC−Q101 Qualified and PPAP Capable 

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications 

• Automotive HEV−EV Onboard Chargers 

• Automotive HEV−EV DC−DC Converters


Detailed Description

Mfr Part #FFSH2065B-F085
Mfronsemi
SeriesAutomotive, AEC-Q101
PackageTube
Product StatusActive
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io)20A
Voltage - Forward (Vf) (Max) @ If1.7 V @ 20 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr40 µA @ 650 V
Capacitance @ Vr, F866pF @ 1V, 100kHz
Mounting TypeThrough Hole
Package / CaseTO-247-2
Supplier Device PackageTO-247-2
Operating Temperature - Junction-55°C ~ 175°C
Base Product NumberFFSH2065


Download

https://www.onsemi.com/pdf/datasheet/ffsh2065b-f085-d.pdf

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