Description
DIODE GEN PURP 400V 10A TO277-3
Features
• Very Low Profile: Typical Height of 1.1 mm
• Ultrafast Recovery Time
• Low Forward Voltage Drop
• Low Thermal Resistance
• Very Stable Operation at Industrial Temperature, 150°C
• RoHS Compliant
• Green Molding Compound as per IEC61249 Standard
• Lead Free in Compliance with EU RoHS 2011/65/EU Directive
• With DAP Option Only
• Industrial Device Qualified per AEC−Q101 Standards
Detailed Description
| Mfr Part # | FES10G |
| Mfr | onsemi |
| Series | Automotive, AEC-Q101 |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 400 V |
| Current - Average Rectified (Io) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 10 A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 400 V |
| Capacitance @ Vr, F | 140pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-277, 3-PowerDFN |
| Supplier Device Package | TO-277-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Base Product Number | FES10 |
Download
https://www.onsemi.com/pdf/datasheet/fes10d-d.pdf
Description
DIODE GEN PURP 400V 10A TO277-3
Features
• Very Low Profile: Typical Height of 1.1 mm
• Ultrafast Recovery Time
• Low Forward Voltage Drop
• Low Thermal Resistance
• Very Stable Operation at Industrial Temperature, 150°C
• RoHS Compliant
• Green Molding Compound as per IEC61249 Standard
• Lead Free in Compliance with EU RoHS 2011/65/EU Directive
• With DAP Option Only
• Industrial Device Qualified per AEC−Q101 Standards
Detailed Description
| Mfr Part # | FES10G |
| Mfr | onsemi |
| Series | Automotive, AEC-Q101 |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 400 V |
| Current - Average Rectified (Io) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 10 A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 400 V |
| Capacitance @ Vr, F | 140pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-277, 3-PowerDFN |
| Supplier Device Package | TO-277-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Base Product Number | FES10 |
Download
https://www.onsemi.com/pdf/datasheet/fes10d-d.pdf
