Description
DIODE GEN PURP 400V 8A TO277-3
Features
• Very High forward Surge Capability: IFSM = 230 A
• Low Leakage Current: 0.37 A at TA = 25°C
• Very Low Profile: Typical Height of 1.1 mm
• Glass Passivated Junction
• HBM (JEDEC A114) > 8 KV; CDM (JEDEC C101C) > 2 KV
• Green Molding Compound as per IEC61249 Standard
• With DAP Option Only
• These Devices are Pb−Free, Halogen Free Free and are RoHS
Compliant
Applications
• General−Purpose Applications
• Reverse Polarity Protection
• Rectifications
Detailed Description
| Mfr | onsemi |
| Series | Automotive, AEC-Q101 |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 400 V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 8 A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 3.37 µs |
| Current - Reverse Leakage @ Vr | 5 µA @ 400 V |
| Capacitance @ Vr, F | 118pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-277, 3-PowerDFN |
| Supplier Device Package | TO-277-3 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Base Product Number | FS8G |
Download
https://www.onsemi.com/pdf/datasheet/fs8m-d.pdf
Description
DIODE GEN PURP 400V 8A TO277-3
Features
• Very High forward Surge Capability: IFSM = 230 A
• Low Leakage Current: 0.37 A at TA = 25°C
• Very Low Profile: Typical Height of 1.1 mm
• Glass Passivated Junction
• HBM (JEDEC A114) > 8 KV; CDM (JEDEC C101C) > 2 KV
• Green Molding Compound as per IEC61249 Standard
• With DAP Option Only
• These Devices are Pb−Free, Halogen Free Free and are RoHS
Compliant
Applications
• General−Purpose Applications
• Reverse Polarity Protection
• Rectifications
Detailed Description
| Mfr | onsemi |
| Series | Automotive, AEC-Q101 |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 400 V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 8 A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 3.37 µs |
| Current - Reverse Leakage @ Vr | 5 µA @ 400 V |
| Capacitance @ Vr, F | 118pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-277, 3-PowerDFN |
| Supplier Device Package | TO-277-3 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Base Product Number | FS8G |
Download
https://www.onsemi.com/pdf/datasheet/fs8m-d.pdf
